The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
Mar. 08, 2011
Prakash Gothoskar, Allentown, PA (US);
Margaret Ghiron, Allentown, PA (US);
Robert Keith Montgomery, Easton, PA (US);
Vipulkumar Patel, Monmouth Junction, NJ (US);
Kalpendu Shastri, Orefield, PA (US);
Soham Pathak, Allentown, PA (US);
Katherine A. Yanushefski, Zionsville, PA (US);
Prakash Gothoskar, Allentown, PA (US);
Margaret Ghiron, Allentown, PA (US);
Robert Keith Montgomery, Easton, PA (US);
Vipulkumar Patel, Monmouth Junction, NJ (US);
Kalpendu Shastri, Orefield, PA (US);
Soham Pathak, Allentown, PA (US);
Katherine A. Yanushefski, Zionsville, PA (US);
Other;
Abstract
A set of planar, two-dimensional optical devices is able to be created in a sub-micron surface layer of an SOI structure, or within a sub-micron thick combination of an SOI surface layer and an overlying polysilicon layer. Conventional masking/etching techniques may be used to form a variety of passive and optical devices in this SOI platform. Various regions of the devices may be doped to form the active device structures. Additionally, the polysilicon layer may be separately patterned to provide a region of effective mode index change for a propagating optical signal.