The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
Nov. 26, 2007
Noel A. Guardala, Columbia, MD (US);
Ian Patrick Wellenius, Raleigh, NC (US);
Jack L. Price, Jr., Derwood, MD (US);
John F. Muth, Cary, NC (US);
Noel A. Guardala, Columbia, MD (US);
Ian Patrick Wellenius, Raleigh, NC (US);
Jack L. Price, Jr., Derwood, MD (US);
John F. Muth, Cary, NC (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
As typically embodied, the inventive method features bombardment of atomic nuclei withHe ions in order to effect transmutation of atoms from a first atomic element to a second atomic element. Two notable inventive genres describe transmutation of: oxygen to nitrogen in an oxygen-containing target (e.g., including ZnO film); and, carbon to boron in a carbon-containing target (e.g., including SiC film). According to the former, transmutation ofO toN occurs; more specifically, transmutation ofO toO occurs via nuclear bombardment, and then transmutation ofO toN occurs via decay by positron emission. According to the latter, transmutation ofC toB occurs; more specifically, transmutation ofC toC occurs via nuclear bombardment, and then transmutation ofC toB occurs via decay by positron emission. Inventive practice frequently results in significant alteration of at least one physical property among: electronic carrier concentration; resistivity; photoconductivity; luminescence; morphology.