The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
Jun. 25, 2009
Satoshi Arakawa, Itami, JP;
Takashi Sakurada, Itami, JP;
Yoshiyuki Yamamoto, Itami, JP;
Issei Satoh, Itami, JP;
Keisuke Tanizaki, Itami, JP;
Hideaki Nakahata, Itami, JP;
Naho Mizuhara, Itami, JP;
Michimasa Miyanaga, Osaka, JP;
Satoshi Arakawa, Itami, JP;
Takashi Sakurada, Itami, JP;
Yoshiyuki Yamamoto, Itami, JP;
Issei Satoh, Itami, JP;
Keisuke Tanizaki, Itami, JP;
Hideaki Nakahata, Itami, JP;
Naho Mizuhara, Itami, JP;
Michimasa Miyanaga, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Abstract
A method of producing an AlGaN (0<x≦1) single crystal of the present invention is directed to growing an AlGaN single crystal by sublimation. The method includes the steps of preparing an underlying substrate, preparing a raw material of high purity, and growing an AlGaN single crystal on the underlying substrate by sublimating the raw material. At the AlGaN single crystal, the refractive index with respect to light at a wavelength greater than or equal to 250 nm and less than or equal to 300 nm is greater than or equal to 2.4, and the refractive index with respect to light at a wavelength greater than 300 nm and less than 350 nm is greater than or equal to 2.3, measured at 300K.