The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2013

Filed:

Nov. 17, 2009
Applicants:

Clifton Quan, Arcadia, CA (US);

Fangchou Yang, Los Angeles, CA (US);

Hee Kyung Kim, El Segundo, CA (US);

Alberto F. Viscarra, Torrance, CA (US);

Inventors:

Clifton Quan, Arcadia, CA (US);

Fangchou Yang, Los Angeles, CA (US);

Hee Kyung Kim, El Segundo, CA (US);

Alberto F. Viscarra, Torrance, CA (US);

Assignee:

Raytheon Company, Waltham, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 7/38 (2006.01);
U.S. Cl.
CPC ...
Abstract

A radio frequency (RF) transition for a three dimensional molded RF structure is provided. In one embodiment, the invention relates to a radio frequency (RF) transition for an RF structure, the RF transition includes an assembly having a first flexible layer, a second flexible layer, and a third flexible layer, wherein a first section of the assembly includes a microstrip transmission line, wherein a second section of the assembly includes a dielectric stripline transmission line, and wherein a third section of the assembly includes a suspended substrate stripline transmission line.


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