The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
Dec. 10, 2007
Sebastien Nuttinck, Heverlee, BE;
Gilberto Curatola, Korbek-Lo, BE;
Sebastien Nuttinck, Heverlee, BE;
Gilberto Curatola, Korbek-Lo, BE;
NXP B.V., Eindhoven, NL;
Abstract
A transistor device (), the transistor device () comprising a substrate (), a fin (A) aligned along a horizontal direction on the substrate (), a first source/drain region () of a first type of conductivity in the fin (A), a second source/drain region () of a second type of conductivity in the fin (A), wherein the first type of conductivity differs from the second type of conductivity, a channel region () in the fin (A) between the first source/drain region () and the second source/drain region (), a gate insulator () on the channel region (), and a gate structure () on the gate insulator (), wherein the sequence of the first source/drain region (), the channel region () and the second source/drain region () is aligned along the horizontal direction.