The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8362545 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 29, 2013

Filed:

Mar. 21, 2011
Applicants:

Tea-kwang Yu, Hwaseong-si, KR;

Jeong-uk Han, Suwon-si, KR;

Yong-tae Kim, Yongin-si, KR;

Inventors:

Tea-Kwang Yu, Hwaseong-si, KR;

Jeong-Uk Han, Suwon-si, KR;

Yong-Tae Kim, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract

The nonvolatile memory device includes a semiconductor substrate, and a device isolation layer defining an active region in the semiconductor substrate. The device isolation layer includes a top surface lower than a top surface of the semiconductor substrate, such that a side-upper surface of the active region is exposed. A sense line crosses both the active region and the device isolation layer, and a word line, spaced apart from the sense line, crosses both the active region and the device isolation layer.


Find Patent Forward Citations

Quick Actions:

Yu, Tea-Kwang. (2013). Nonvolatile memory device and method of manufacturing the same (U.S. Patent No. 8362545). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8362545

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…