Solid-state imaging device and fabrication method thereof

Abstract

Provision of a solid-state imaging device of a planarized structure with reduced dark currents, allowing for high sensitivities over a wide wavelength band ranging from visible wavelengths to near-infrared wavelengths, and a fabrication method of the same. There are steps of having circuitry () formed on a substrate (), forming a lower electrode layer () on the circuitry (), patterning the lower electrode layer () to separate pixel-wise into a set of segments, forming a compound-semiconductor thin film of chalcopyrite structure () over a whole area of element regions, applying a resist layer () on the compound-semiconductor thin film () to pixel-wise pattern in accordance with the lower electrode layer () as a base separated into the set of segments, applying an ion doping over a whole area of element regions, forming element separating regions () in the compound-semiconductor thin film (), removing the resist layer () for exposure of surfaces of a set of compound-semiconductor thin films () pixel-wise separated by the element separating regions (), and forming a transparent electrode layer () in a planarizing manner over a whole area of element regions.