Integrated circuit devices having high density logic circuits therein powered using multiple supply voltages

Abstract

Integrated circuit devices include a substrate having a semiconductor substrate region therein containing multiple well regions of different conductivity type. A first semiconductor well region of first conductivity type is provided in the semiconductor substrate region. This first semiconductor well region has a first plurality of transistor regions therein arranged in a first zig-zag pattern extending across the semiconductor substrate region. A second semiconductor well region of second conductivity type is also provided in the semiconductor substrate region. This second semiconductor well region has a second plurality of transistor regions therein arranged in a second zig-zag pattern extending across the semiconductor substrate region. This second zig-zag pattern is intertwined with the first zig-zag pattern. A plurality of first transistors of second conductivity type are provided in the first plurality of transistor regions and a plurality of second transistors of first conductivity type are provided in the second plurality of transistors regions.