The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
Nov. 18, 2011
Yusuke Yoshizumi, Itami, JP;
Shimpei Takagi, Osaka, JP;
Takatoshi Ikegami, Itami, JP;
Masaki Ueno, Itami, JP;
Koji Katayama, Osaka, JP;
Yusuke Yoshizumi, Itami, JP;
Shimpei Takagi, Osaka, JP;
Takatoshi Ikegami, Itami, JP;
Masaki Ueno, Itami, JP;
Koji Katayama, Osaka, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
A method of fabricating group-III nitride semiconductor laser device includes: preparing a substrate comprising a hexagonal group-III nitride semiconductor and having a semipolar principal surface; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, where the laser structure includes a semiconductor region and the substrate, where the semiconductor region is formed on the semipolar principal surface; scribing a first surface of the substrate product in a direction of an a-axis of the hexagonal group-III nitride semiconductor to form first and second scribed grooves; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.