The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
Aug. 21, 2009
Michiko Takei, Osaka, JP;
Yasumori Fukushima, Osaka, JP;
Kazuhide Tomiyasu, Osaka, JP;
Shin Matsumoto, Osaka, JP;
Kazuo Nakagawa, Osaka, JP;
Yutaka Takafuji, Osaka, JP;
Michiko Takei, Osaka, JP;
Yasumori Fukushima, Osaka, JP;
Kazuhide Tomiyasu, Osaka, JP;
Shin Matsumoto, Osaka, JP;
Kazuo Nakagawa, Osaka, JP;
Yutaka Takafuji, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
Provided is a semiconductor device manufacturing method wherein the following steps are performed; a step of forming at least a part of an element on a base body layer, a step of forming a peeling layer, a step of forming a planarizing film; a step of forming a die by separating the base body layer at a separating region; a step of bonding the die to a substrate by bonding the die on the planarizing film; and a step of peeling and removing a part of the base body layer along the peeling layer. Prior to the step of forming the die, a step of forming a groove opened on the surface of the planarizing film such that at least a part of the separating region is included on the bottom surface of the groove, and forming the die such that the die has a polygonal outer shape wherein all the internal angles are obtuse by forming the groove is performed.