The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
Nov. 13, 2008
Applicant:
Jeong Y. Choi, Palo Alto, CA (US);
Inventor:
Jeong Y. Choi, Palo Alto, CA (US);
Assignee:
MoSys, Inc., Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming an embedded DRAM cell having multiple-thickness gate dielectrics. An oxidation-enhancing dopant is selectively implanted into a well region in an area that is exposed by a first mask. A thermal oxidation step simultaneously produces the field dielectric for two distinct devices each having a different oxide thickness. The method is applicable to quad-density DRAM cells using fewer oxidation steps. The method is also applicable to planar DRAM cells, and does not require increasing the number of masks during the fabrication of planar DRAM cells.