The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8361861 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 29, 2013

Filed:

Jan. 19, 2012
Applicant:

Jirou Miura, Kawasaki, JP;

Inventor:

Jirou Miura, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided is a semiconductor device, including a silicon substrate, a first insulating film formed on the silicon substrate, a first conductive plug formed in an inside of a first contact hole of the first insulating film, an underlying conductive film having a flat surface formed on the first conductive plug and in the circumference thereof, a crystalline conductive film formed on the underlying conductive film, and a capacitor in which a lower electrode, a dielectric film made of a ferroelectric material, and an upper electrode are laminated in this order on the crystalline conductive film.


Find Patent Forward Citations

Miura, Jirou. (2013). Semiconductor device and method of manufacturing the same (U.S. Patent No. 8361861). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8361861

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