The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2013

Filed:

Jul. 15, 2011
Applicants:

Yong-hwan Ryu, Seoul, KR;

Jun Seo, Gyeonggi-do, KR;

Eun-young Kang, Seoul, KR;

Jae-seung Hwang, Gyeonggi-do, KR;

Sung-un Kwon, Jeonbuk, KR;

Inventors:

Yong-Hwan Ryu, Seoul, KR;

Jun Seo, Gyeonggi-do, KR;

Eun-Young Kang, Seoul, KR;

Jae-Seung Hwang, Gyeonggi-do, KR;

Sung-Un Kwon, Jeonbuk, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/338 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a semiconductor device in which a plurality of conductive lines having a fine pitch and a uniform thickness can be formed is provided. The method includes forming a plurality of first conductive patterns in a insulation layer as closed curves, forming a plurality of mask patterns on the insulation layer, the mask patterns exposing end portions of each of the first conductive patterns, and forming a plurality of second conductive patterns in the insulation layer as lines by removing the end portions of each of the first conductive patterns.


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