The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
Mar. 15, 2010
Tsutomu Yamazaki, Osaka, JP;
Tsutomu Yamazaki, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A method for manufacturing a photoelectric conversion element and a photoelectric conversion element manufactured by the manufacturing method. The method includes the steps of forming a p-type impurity diffusion layer by diffusing boron into a silicon substrate, forming an oxidation control mask on a surface of the p-type impurity diffusion layer in an area corresponding to an area where an electrode for p-type is to be formed, forming a thermal silicon oxide film on the surface of the p-type impurity diffusion layer, exposing part of the surface of the p-type impurity diffusion layer by removing the oxidation control mask formed on the surface of the p-type impurity diffusion layer in the area corresponding to the area where the electrode for p-type is to be formed, and forming the electrode for p-type on the part of the surface of the p-type impurity diffusion layer exposed by the removal of the oxidation control mask.