The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
Dec. 06, 2006
Jae Hoon Lee, Suwon, KR;
Jung Hee Lee, Daegu, KR;
Hyun Ick Cho, Daegu, KR;
Dae Kil Kim, Daegu, KR;
Jae Chul RO, Seoul, KR;
Jae Hoon Lee, Suwon, KR;
Jung Hee Lee, Daegu, KR;
Hyun Ick Cho, Daegu, KR;
Dae Kil Kim, Daegu, KR;
Jae Chul Ro, Seoul, KR;
Samsung Electronics Co., Ltd., Seoul, KR;
Abstract
A method of manufacturing a vertical GaN-based LED includes forming a nitride-based buffer layer on a silicon substrate; sequentially forming a p-type GaN layer, an active layer, and an n-type GaN layer on the nitride-based buffer layer; forming an n-electrode on the n-type GaN layer; forming a plating seed layer on the n-electrode; forming a structure supporting layer on the plating seed layer; removing the silicon substrate through wet etching and forming roughness on the surface of the p-type GaN layer through over-etching; and forming a p-electrode on the p-type GaN layer having the roughness formed.