The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 29, 2013

Filed:

Feb. 20, 2009
Applicants:

Toshinori Ono, Tokyo, JP;

Hiroshi Kanai, Kanagawa-ken, JP;

Tatsuysa Hinoue, Kanagawa, JP;

Hiroyuki Suzuki, Kanagawa, JP;

Hiroshi Inaba, Kanagawa, JP;

Inventors:

Toshinori Ono, Tokyo, JP;

Hiroshi Kanai, Kanagawa-ken, JP;

Tatsuysa Hinoue, Kanagawa, JP;

Hiroyuki Suzuki, Kanagawa, JP;

Hiroshi Inaba, Kanagawa, JP;

Assignee:

HGST Netherlands B.V., Amsterdam, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

Embodiments of the present invention provide recording area separated magnetic recording media (DTMs, BPMs) allowing magnetic heads to fly lower. According to one embodiment, the recording area separated magnetic recording media are configured so that magnetic recording layers have parts with the relatively higher element ratio of a ferromagnetic material, and parts with the lower element ratio of the ferromagnetic material, occurring periodically in the in-plane direction, and the average height from the substrate surface of the parts with the relatively higher element ratio of a ferromagnetic material is higher than the average height from the substrate surface of the parts with the lower element ratio of the ferromagnetic material. In producing recording area separated magnetic recording media with the element ratio of a ferromagnetic material relatively lowered by ion implantation, preliminarily etching the part to be ion implanted makes the height after ion implantation relatively lower than the non-implanted part.


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