The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
Jul. 16, 2009
Applicants:
Michael A. Todd, Phoenix, AZ (US);
Mark Hawkins, Gilbert, AZ (US);
Inventors:
Michael A. Todd, Phoenix, AZ (US);
Mark Hawkins, Gilbert, AZ (US);
Assignee:
ASM America, Inc., Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/52 (2006.01); C23C 16/22 (2006.01); C23C 16/24 (2006.01); C23C 16/44 (2006.01); C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, a higher order silane is employed to deposit thin films containing silicon that are useful in the semiconductor industry in various applications such as transistor gate electrodes.