The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2013
Filed:
Nov. 12, 2009
Jae-phil Kong, Hwaseong-si, KR;
Chi-weon Yoon, Seoul, KR;
Jae-phil Kong, Hwaseong-si, KR;
Chi-weon Yoon, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided are a flash memory device and a reading method of the flash memory device. A multi-level cell flash memory device includes: a memory cell array comprising main memory cells storing main data, and indicator cells storing indicate data indicating one of a first mode and a second mode in which the main data of the main memory cell, to which the indicate cells correspond, is written; and an output unit outputting in response to a control signal corresponding to the indicate data, one of main data read from the memory cell array and forced data forcing some bit values of the main data to bit values of mode specific data, as reading data.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile