The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 22, 2013

Filed:

Apr. 02, 2008
Applicants:

Yuchen Zhou, San Jose, CA (US);

Erhard Schreck, San Jose, CA (US);

David HU, Los Altos, CA (US);

Inventors:

Yuchen Zhou, San Jose, CA (US);

Erhard Schreck, San Jose, CA (US);

David Hu, Los Altos, CA (US);

Assignee:

Headway Technologies, Inc., Milpitas, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11B 11/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

The preferred embodiments of the present invention are devices and processes for producing high resolution lithography or pattern formation on the nanometer scale, using a voltage-biased probe that is slider-mounted along with, or separate from but linked to, a magnetic read head within a HDD mechanism. The probe is guided and positioned over a target layer by the motion of the read head which is, itself, guided by signals from servo tracks on a magnetic layer that activate an electromechanical servomechanism within the HDD. An electric field produced by the probe is capable of modifying the surface of the target layer over which the probe flies either directly, or by current induced or thermally induced effects. Targets such as amorphous or crystalline silicon can be hydrogen passivated and the electric field will produce oxidized or anodized lines with nanometer resolution.


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