Semiconductor device and method for manufacturing same

Abstract

A method for manufacturing a semiconductor device, which includes the steps of: forming a mask layer () on a gate insulating film (), the mask layer () having openings over the portions of first and second semiconductor layers that are destined to become low-concentration impurity regions and source and drain regions; forming first conductivity type implantation regions () in the first and second semiconductor layers respectively by implanting a first conductivity type impurity () to the first and second semiconductor layers through the openings in the mask layer (); forming first and second gate electrodes () to cover a portion of the first conductivity type implantation regions and portions of the first and second semiconductor layers that are destined to become channel regions; forming another mask layer () which has openings over portions of the first conductivity type implantation region () of the first semiconductor layer, said portions being located at both ends of the first semiconductor layer, the entire second semiconductor layer, and a portion of a third semiconductor layer; and implanting the first conductivity type impurity into the first, second, and third semiconductor layers through the openings in the another mask layer ().