The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2013
Filed:
Dec. 28, 2007
Applicant:
Hiroyuki Nansei, Fukushima-Ken, JP;
Inventor:
Hiroyuki Nansei, Fukushima-Ken, JP;
Assignee:
Spansion LLC, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); G11C 11/34 (2006.01); G11C 16/04 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
One embodiment in accordance with the invention can include a semiconductor device that includes: a groove that is formed in a semiconductor substrate; bottom oxide films that are formed on both side faces of the groove; two charge storage layers that are formed on side faces of the bottom oxide films; top oxide films that are formed on side faces of the two charge storage layers; and a silicon oxide layer that is formed on the bottom face of the groove, and has a smaller film thickness than the top oxide films.