The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2013
Filed:
Sep. 07, 2011
Chih-yuan Chen, Taichung, TW;
Meng-hsien Chen, Taichung, TW;
Chih-wei Hsiung, Taichung, TW;
Rexchip Electronics Corporation, Taichung, TW;
Abstract
A three-dimensional dynamic random access memory with an ancillary electrode structure includes a substrate, at least one bit line formed on the substrate, at least one pillar element formed on a growth zone of the bit line, an ancillary electrode, a character line parallel with the substrate and perpendicular to the bit line, and at least one capacitor connecting to the pillar element. The bit line is formed on the substrate by doping and diffusing a doping element. The ancillary electrode is located on a separation zone of the bit line and adjacent to the pillar element. The character line is insulated from the ancillary electrode and incorporates with the bit line to output or input electronic data to the capacitor. Through the ancillary electrode, impedance of the bit line can be controlled to enhance conductivity of the bit line.