The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2013
Filed:
Feb. 12, 2010
Suk-hun Choi, Suwon-si, KR;
Chang-ki Hong, Seongnam-si, KR;
Jae-hyoung Choi, Hwaseong-si, KR;
Yoon-ho Son, Yongin-si, KR;
Min-young Park, Suwon-si, KR;
Yong-suk Tak, Seoul, KR;
Suk-Hun Choi, Suwon-si, KR;
Chang-Ki Hong, Seongnam-si, KR;
Jae-Hyoung Choi, Hwaseong-si, KR;
Yoon-Ho Son, Yongin-si, KR;
Min-Young Park, Suwon-si, KR;
Yong-Suk Tak, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of fabricating a semiconductor device includes depositing tungsten on an insulating layer in which a contact hole is formed by chemical vapor deposition (CVD), performing chemical mechanical planarization (CMP) on the tungsten to expose the insulating layer and form a tungsten contact plug, and performing rapid thermal oxidation (RTO) on the tungsten contact plug in an oxygen atmosphere such that the tungsten expands volumetrically into tungsten oxide (WO).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile