The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2013
Filed:
Jul. 25, 2011
Jong-min Lee, Ulsan, KR;
Jae-kwan Park, Suwon-si, KR;
Jee-hoon Han, Hwaseong-si, KR;
Samsung Electronics Co. Ltd., , KR;
Abstract
Methods of forming memory devices are provided. The methods may include forming a pre-stacked gate structure including a lower structure and a first polysilicon pattern on the substrate. The methods may also include forming an insulation layer covering the pre-stacked gate structure. The methods may further include forming a trench in the insulation layer by removing a portion of the first polysilicon pattern. The methods may additionally include forming a metal film pattern in the trench on the first polysilicon pattern. The methods may also include forming a first metal silicide pattern by performing a first thermal treatment on the first polysilicon pattern and the metal film pattern. The methods may further include forming a second polysilicon pattern in the trench. The methods may additionally include forming a second metal silicide pattern by performing a second thermal treatment on the second polysilicon pattern and the first metal silicide pattern.