The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2013
Filed:
May. 31, 2011
Seung-kyu Park, Yongin, KR;
Ki-yong Lee, Yongin, KR;
Jin-wook Seo, Yongin, KR;
Min-jae Jeong, Yongin, KR;
Yun-mo Chung, Yongin, KR;
Yong-duck Son, Yongin, KR;
Byung-soo SO, Yongin, KR;
Byoung-keon Park, Yongin, KR;
Kil-won Lee, Yongin, KR;
Dong-hyun Lee, Yongin, KR;
Jong-ryuk Park, Yongin, KR;
Tak-young Lee, Yongin, KR;
Jae-wan Jung, Yongin, KR;
Seung-Kyu Park, Yongin, KR;
Ki-Yong Lee, Yongin, KR;
Jin-Wook Seo, Yongin, KR;
Min-Jae Jeong, Yongin, KR;
Yun-Mo Chung, Yongin, KR;
Yong-Duck Son, Yongin, KR;
Byung-Soo So, Yongin, KR;
Byoung-Keon Park, Yongin, KR;
Kil-Won Lee, Yongin, KR;
Dong-Hyun Lee, Yongin, KR;
Jong-Ryuk Park, Yongin, KR;
Tak-Young Lee, Yongin, KR;
Jae-Wan Jung, Yongin, KR;
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Abstract
A method of crystallizing a silicon layer and a method of manufacturing a TFT, the method of crystallizing a silicon layer including forming a catalyst metal layer on a substrate; forming a catalyst metal capping pattern on the catalyst metal layer; forming a second amorphous silicon layer on the catalyst metal capping pattern; and heat-treating the second amorphous silicon layer to form a polycrystalline silicon layer.