The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2013
Filed:
Nov. 03, 2009
Ivan Avrutsky, Troy, MI (US);
Ivan Avrutsky, Troy, MI (US);
Wayne State University, Detroit, MI (US);
Abstract
A silicon-on-insulator device has a waveguide having a carrier wafer layer, a buffer layer, a guiding layer, and a cladding layer. The silicon-on-insulator is additionally provided with a polarizing arrangement deposited on a predetermined portion of the waveguide, the polarizing arrangement being provided with a bottom metal layer, a dielectric gap, and a top metal layer, the bottom metal layer being deposited on the cladding layer. A protection layer formed of SiOoverlies the top metal layer. The polarizing arrangement attenuates preferentially the electromagnetic energy that is propagated in the waveguide in the TM transmission mode. There is formed a gap plasmon-polariton (GPP) confined to the dielectric gap, the dielectric gap having a high optical loss characteristic. In accordance with a method aspect, there are provided the steps of forming a silicon-on-insulator waveguide arrangement and depositing a polarizer structure that absorbs the electromagnetic energy in the TM transmission mode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile