The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2013
Filed:
Sep. 23, 2009
Christopher Fred Keimel, Schenectady, NY (US);
Marco Francesco Aimi, Niskayuna, NY (US);
Shubhra Bansal, Niskayuna, NY (US);
Reed Roeder Corderman, Niskayuna, NY (US);
Kuna Venkat Satya Rama Kishore, Bangalore, IN;
Eddula Sudhakar Reddy, Bangalore, IN;
Atanu Saha, Bangalore, IN;
Kanakasabapathi Subramanian, Clifton Park, NY (US);
Parag Thakre, Bangalore, IN;
Alex David Corwin, Niskayuna, NY (US);
Christopher Fred Keimel, Schenectady, NY (US);
Marco Francesco Aimi, Niskayuna, NY (US);
Shubhra Bansal, Niskayuna, NY (US);
Reed Roeder Corderman, Niskayuna, NY (US);
Kuna Venkat Satya Rama Kishore, Bangalore, IN;
Eddula Sudhakar Reddy, Bangalore, IN;
Atanu Saha, Bangalore, IN;
Kanakasabapathi Subramanian, Clifton Park, NY (US);
Parag Thakre, Bangalore, IN;
Alex David Corwin, Niskayuna, NY (US);
General Electric Company, Niskayuna, NY (US);
Abstract
Provided is a device, such as a switch structure, that includes a contact and a conductive element that is configured to be deformable between a first position in which the conductive element is separated from the contact and a second position in which the conductive element contacts the contact. The conductive element can be formed substantially of metallic material configured to inhibit time-dependent deformation. For example, the metallic material may be configured to exhibit a maximum steady-state plastic strain rate of less than 10swhen subject to a stress of at least about 25 percent of a yield strength of the metallic material and a temperature less than or equal to about half of a melting temperature of the metallic material. The contact and the conductive element may be part of a microelectromechanical device or a nanoelectromechanical device. Associated methods are also provided.