The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 15, 2013

Filed:

Aug. 03, 2009
Applicants:

Hiromichi Takaoka, Kanagawa, JP;

Yoshitaka Kubota, Kanagawa, JP;

Hiroshi Tsuda, Kanagawa, JP;

Inventors:

Hiromichi Takaoka, Kanagawa, JP;

Yoshitaka Kubota, Kanagawa, JP;

Hiroshi Tsuda, Kanagawa, JP;

Assignee:

Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The semiconductor device includes: a substrate; an electric fuse that includes a lower-layer wiring formed on the substrate, a first via provided on the lower-layer wiring and connected to the lower-layer wiring, and an upper-layer wiring provided on the first via and connected to the first via, a flowing-out portion of a conductive material constituting the electric fuse being formed in a cut-off state of the electric fuse; and a heat diffusion portion that includes a heat diffusion wiring that is formed in the same layer as one of the upper-layer wiring and the lower-layer wiring and is placed on a side of the one of the upper-layer wiring and the lower-layer wiring, the heat diffusion portion being electrically connected to the one of the upper-layer wiring and the lower-layer wiring.


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