The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2013
Filed:
Jul. 01, 2010
Hsin-chih Chiang, Hsinchu, TW;
Han-chung Tai, Kaohsiung, TW;
Hsin-Chih Chiang, Hsinchu, TW;
Han-Chung Tai, Kaohsiung, TW;
System General Corp., Taipei, TW;
Abstract
A semiconductor device. The semiconductor comprises a substrate, a VDMOS, a JFET, a first electrode, a second electrode, a third electrode and a fourth electrode. The VDMOS is formed in the substrate. The JFET is formed in the substrate. The first electrode, the second electrode and a third electrode are connected to the VDMOS and used as a first gate electrode, a first drain electrode and a first source electrode of the VDMOS respectively. The second electrode, the third electrode and the fourth electrode are connected to the JFET and used as a second drain electrode, a second gate electrode and a second source electrode of the JFET respectively.