The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2013
Filed:
May. 07, 2010
Oh-jung Kwon, Hopewell Junction, NY (US);
Junedong Lee, Hopewell Junction, NY (US);
Chengwen Pei, Danbury, CT (US);
Geng Wang, Stormville, NY (US);
Oh-jung Kwon, Hopewell Junction, NY (US);
Junedong Lee, Hopewell Junction, NY (US);
Chengwen Pei, Danbury, CT (US);
Geng Wang, Stormville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A substrate including a stack of a handle substrate, an optional lower insulator layer, a doped polycrystalline semiconductor layer, an upper insulator layer, and a top semiconductor layer is provided. A deep trench is formed through the top semiconductor layer, the upper insulator layer, and the doped polycrystalline semiconductor layer. Exposed vertical surfaces of the polycrystalline semiconductor layer are crystallographically etched to form random facets in the deep trench, thereby increasing the total exposed surface area of the polycrystalline semiconductor layer in the deep trench. A node dielectric and at least one conductive material are deposited to fill the trench and to form a buried strap portion, which constitute a capacitor of an eDRAM. Access transistors and other logic devices can be formed.