The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2013
Filed:
Aug. 13, 2008
Vinod Adivarahan, Columbia, SC (US);
Asif Khan, Irmo, SC (US);
Rubina Khan, Irmo, SC (US);
Nitek, Inc., Irmo, SC (US);
Abstract
An ultra-violet light-emitting diode (LED) array,, and method for fabricating same with an AlInGaN multiple-quantum-well active region,, exhibiting stable cw-powers. The LED includes a template,, with an ultraviolet light-emitting array structure on it. The template includes a first buffer layer,, then a second buffer layer,, on the first preferably with a strain-relieving layer in both buffer layers. Next there is a semiconductor layer having a first type of conductivity,, followed by a layer providing a quantum-well region,, with an emission spectrum ranging from 190 nm to 369 nm. Another semiconductor layer having a second type of conductivity is applied next,. A first metal contact,, is a charge spreading layer in electrical contact with the first layer and between the array of LED's. A second contact,, is applied to the semiconductor layer having the second type of conductivity, to complete the LED.