The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 15, 2013

Filed:

Sep. 23, 2011
Applicants:

Hyun Sik Moon, Seoul, KR;

DO Hwan Kim, Seoul, KR;

Jong Jin Park, Yongin-si, KR;

Jung Seok Hahn, Seongnam-si, KR;

Inventors:

Hyun Sik Moon, Seoul, KR;

Do Hwan Kim, Seoul, KR;

Jong Jin Park, Yongin-si, KR;

Jung Seok Hahn, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C07F 1/12 (2006.01); H01L 51/50 (2006.01);
U.S. Cl.
CPC ...
Abstract

Example embodiments provide a nitrogen-containing heteroaromatic ligand-transition metal complex, a buffer layer including the complex, which may improve the injection and transport of electrical charges, an organic thin film transistor and an electronic device including the buffer layer, in which the injection of electrons or holes and the transport of charges between layers are accelerated, thereby improving the efficiency thereof, and methods of manufacturing the same.


Find Patent Forward Citations

Moon, Hyun. (2013). Nitrogen-containing heteroaromatic ligand-transition metal complexes, buffer layer comprising the complexes and organic thin film transistor comprising the buffer layer (U.S. Patent No. 8354533). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8354533

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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