The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2013
Filed:
Nov. 04, 2010
Jae-geun OH, Gyeonggi-do, KR;
Seung-joon Jeon, Gyeonggi-do, KR;
Jin-ku Lee, Gyeonggi-do, KR;
Mi-ri Lee, Gyeonggi-do, KR;
Bong-seok Jeon, Gyeonggi-do, KR;
Jae-Geun Oh, Gyeonggi-do, KR;
Seung-Joon Jeon, Gyeonggi-do, KR;
Jin-Ku Lee, Gyeonggi-do, KR;
Mi-Ri Lee, Gyeonggi-do, KR;
Bong-Seok Jeon, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A method for fabricating a semiconductor device includes forming a plurality of bodies that are each isolated from another by a trench and each include a diffusion barrier region with a sidewall exposed to the trench, forming a doped layer gap-filling the trench, forming a sidewall junction at the exposed sidewall of the diffusion barrier region by annealing the doped layer, and forming a conductive line coupled with the sidewall junction to fill the trench.