The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2013
Filed:
Nov. 14, 2008
Michiko Takei, Osaka, JP;
Yasumori Fukushima, Osaka, JP;
Kazuhide Tomiyasu, Osaka, JP;
Masao Moriguchi, Osaka, JP;
Yutaka Takafuji, Osaka, JP;
Michiko Takei, Osaka, JP;
Yasumori Fukushima, Osaka, JP;
Kazuhide Tomiyasu, Osaka, JP;
Masao Moriguchi, Osaka, JP;
Yutaka Takafuji, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A method for manufacturing a semiconductor device includes: a first step of forming a base layer, which includes an element portion having a gate electrode and a flat interlayer insulating film formed so as to cover the gate electrode; a second step of ion implanting a delamination material into the base layer to form a delamination layer; a third step of bonding the base layer to a substrate; and a fourth step of separating and removing a part of the base layer along the delamination layer. An implantation depth of the delamination material in the gate electrode is substantially the same as that of the delamination material in the interlayer insulating film.