The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2013
Filed:
Dec. 06, 2010
Fumihiko Inoue, Fukushima-Ken, JP;
Takayuki Maruyama, Fukushima-Ken, JP;
Tomohiro Watanabe, Fukushima-Ken, JP;
Fumihiko Inoue, Fukushima-Ken, JP;
Takayuki Maruyama, Fukushima-Ken, JP;
Tomohiro Watanabe, Fukushima-Ken, JP;
Spansion LLC, Sunnyvale, CA (US);
Abstract
Structures and methods for precision trench formation are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a first oxygen-containing region in a semiconductor substrate by performing an oxygen ion implantation to a portion of the semiconductor substrate, and oxidizing the first oxygen-containing region using oxygen contained therein by performing a thermal processing to the semiconductor substrate, where the first oxygen-containing region is converted to a first oxide region. The method further comprises forming a groove in the semiconductor substrate by eliminating the first oxide region, where the performing thermal processing comprises subjecting the first oxygen-containing region to a gas low on oxygen.