The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2013
Filed:
Oct. 29, 2010
Anup Bhalla, Santa Clara, CA (US);
Xiaobin Wang, San Jose, CA (US);
Wei Wang, Santa Clara, CA (US);
Yi Su, Sunnyvale, CA (US);
Daniel NG, Campbell, CA (US);
Anup Bhalla, Santa Clara, CA (US);
Xiaobin Wang, San Jose, CA (US);
Wei Wang, Santa Clara, CA (US);
Yi Su, Sunnyvale, CA (US);
Daniel Ng, Campbell, CA (US);
Other;
Abstract
A semiconductor power device supported on a semiconductor substrate includes an electrostatic discharge (ESD) protection circuit disposed on a first portion of patterned ESD polysilicon layer on top of the semiconductor substrate. The semiconductor power device further includes a second portion of the patterned ESD polysilicon layer constituting a body implant ion block layer for blocking implanting body ions to enter into the semiconductor substrate below the body implant ion block layer. In an exemplary embodiment, the electrostatic discharge (ESD) polysilicon layer on top of the semiconductor substrate further covering a scribe line on an edge of the semiconductor device whereby a passivation layer is no longer required manufacturing the semiconductor device for reducing a mask required for patterning the passivation layer.