The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8354281 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 15, 2013

Filed:

Dec. 22, 2009
Applicants:

Kyoung-jin Jeong, Gyunggi-do, KR;

Donghoon Kim, Gyunggi-do, KR;

Jaewoo Joung, Gyunggi-do, KR;

Sungil OH, Seoul, KR;

Inventors:

Kyoung-Jin Jeong, Gyunggi-do, KR;

Donghoon Kim, Gyunggi-do, KR;

Jaewoo Joung, Gyunggi-do, KR;

Sungil Oh, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

There is provided a method of manufacturing a back-surface electrode type solar cell. The method may include: forming a conductive metal thin film on a crystalline silicon wafer; forming plate-resistant partition walls on a top surface of the conductive metal thin film; forming a metal layer in a space between the plate-resistant partition walls and then removing the plate-resistant partition walls; and removing the conductive metal thin film that is exposed by removing the plate-resistant partition walls so as to expose the crystalline silicon wafer.


Find Patent Forward Citations

Jeong, Kyoung-Jin. (2013). Method of manufacturing back-surface electrode type solar cell (U.S. Patent No. 8354281). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8354281

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