Memory cell array, nonvolatile storage device, memory cell, and method of manufacturing memory cell array

Abstract

A method of manufacturing a memory cell array in which first conductive layers () and second conductive layers () extend above a semiconductor substrate () and three-dimensionally cross with each other, and memory cells each of which includes a current steering element () and a variable resistance element () electrically connected in series to each other is provided at a corresponding one of three-dimensional cross points between the first conductive layers () and the second conductive layers (). The method includes: forming a first interlayer insulating film (); forming a contact hole in the interlayer insulating film (); depositing a first plug material () in the contact hole and on the first interlayer insulating film (); performing a first polishing in which the first plug material () is polished until the first interlayer insulating film () is exposed; depositing a conductive film () that becomes a first electrode () of the current steering element (), on the first plug material () and the first interlayer insulating film () after the first polishing; and performing a second polishing in which a surface of the conductive film () is polished.