The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
Jan. 13, 2011
Applicants:
Yun Wu, San Jose, CA (US);
Hong-tsz Pan, Cupertino, CA (US);
Qi Lin, Cupertino, CA (US);
Bang-thu Nguyen, Santa Clara, CA (US);
Inventors:
Yun Wu, San Jose, CA (US);
Hong-Tsz Pan, Cupertino, CA (US);
Qi Lin, Cupertino, CA (US);
Bang-Thu Nguyen, Santa Clara, CA (US);
Assignee:
Xilinx, Inc., San Jose, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A hard implantation mask layer is formed on a semiconductor wafer. An etch mask layer is formed on the hard implantation mask layer and patterned. The hard implantation mask layer is etched to form a well implantation pattern and ions are implanted into the semiconductor wafer to form wells in the semiconductor wafer, in areas where the semiconductor wafer is not covered by the well implantation mask.