The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
Dec. 02, 2011
Hiroshi Watanabe, Yokohama, JP;
Hiroshi Nakamura, Kawasaki, JP;
Kazuhiro Shimizu, Yokohama, JP;
Seiichi Aritome, Yokohama, JP;
Toshitake Yaegashi, Yokohama, JP;
Yuji Takeuchi, Kawasaki, JP;
Kenichi Imamiya, Kawasaki, JP;
Ken Takeuchi, Tokyo, JP;
Hideko Oodaira, Kuroishi, JP;
Hiroshi Watanabe, Yokohama, JP;
Hiroshi Nakamura, Kawasaki, JP;
Kazuhiro Shimizu, Yokohama, JP;
Seiichi Aritome, Yokohama, JP;
Toshitake Yaegashi, Yokohama, JP;
Yuji Takeuchi, Kawasaki, JP;
Kenichi Imamiya, Kawasaki, JP;
Ken Takeuchi, Tokyo, JP;
Hideko Oodaira, Kuroishi, JP;
Kabushiki Kaisha Toshiba, Kawasaki-shi, JP;
Abstract
A select gate transistor has a select gate electrode composed of a first-level conductive layer and a second-level conductive layer. The first-level conductive layer has contact areas. The second-level conductive layer has its portions removed that are located above the contact areas. Two adjacent select gate electrodes that are adjacent to each other in the column direction are arranged such that the contact areas of one select gate electrode are not opposed to the contact areas of the other select gate electrode. One select gate electrode has its first- and second-level conductive layers removed in their portions that are opposed to the contact areas of the other select gate electrode.