The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
Aug. 21, 2008
Hamid Tony Bahramian, Torrance, CA (US);
Hamid Tony Bahramian, Torrance, CA (US);
International Rectifier Corporation, El Segundo, CA (US);
Abstract
An enhancement mode III-Nitride device has a floating gate spaced from a drain electrode which is programmed by charges injected into the floating gate to form a permanent depletion region which interrupts the 2-DEG layer beneath the floating gate. A conventional gate is formed atop the floating gate and is insulated therefrom by a further dielectric layer. The device is a normally off E mode device and is turned on by applying a positive voltage to the floating gate to modify the depletion layer and reinstate the 2-DEG layer. The device is formed by conventional semiconductor fabrication techniques.