The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2013

Filed:

Apr. 01, 2011
Applicants:

Min Yan, Singapore, SG;

James Edward Pickett, Schenectady, NY (US);

Rebecca Suzanne Northey, Delmar, NY (US);

Inventors:

Min Yan, Singapore, SG;

James Edward Pickett, Schenectady, NY (US);

Rebecca Suzanne Northey, Delmar, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 29/26 (2006.01); H01L 31/12 (2006.01); H01L 33/00 (2010.01); H01L 29/22 (2006.01); H01L 29/06 (2006.01); H01L 31/0328 (2006.01); H01L 31/0336 (2006.01); H01L 31/072 (2006.01); H01L 31/109 (2006.01);
U.S. Cl.
CPC ...
Abstract

An optoelectronic device assembly can include: a coated element and an electroactive cell on the coated element, wherein the electroactive cell is selected from the group consisting of a light emitting diode and a photovoltaic cell. The coated element can include: transparent thermoplastic substrate and a protective weathering layer. The transparent thermoplastic substrate can include a material selected from the group consisting of aromatic polycarbonate and polyester, and combinations including at least one of the foregoing materials. The protective weathering layer can have a UV absorbance loss rate at 330 nm of less than or equal to 0.15 A/year as estimated from filtered xenon arc exposure and/or having a rate of erosion of less than or equal to 5 μm per year as estimated from filtered xenon arc exposure.


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