The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2013

Filed:

Apr. 09, 2010
Applicants:

Kazumasa Nomoto, Kanagawa, JP;

Mao Katsuhara, Kanagawa, JP;

Akira Yumoto, Kanagawa, JP;

Inventors:

Kazumasa Nomoto, Kanagawa, JP;

Mao Katsuhara, Kanagawa, JP;

Akira Yumoto, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a thin film transistor includes the steps of covering a gate electrode patterned on a substrate with a gate insulating film, forming an organic semiconductor layer and an electrode film on the gate insulating film in that lamination order, and forming a negative type photoresist film on the substrate provided with the organic semiconductor layer and the electrode film and forming a resist pattern, which serves as a mask for forming a source-drain by etching the electrode film, through back surface exposure from the substrate side by using the gate electrode as a light-shielding mask and the following development treatment.


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