The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
Nov. 15, 2007
Myoung-jae Lee, Suwon-si, KR;
Young-soo Park, Yongin-si, KR;
Ran-ju Jung, Suwon-si, KR;
Sun-ae Seo, Hwaseong-si, KR;
Dong-chul Kim, Suwon-si, KR;
Seung-eon Ahn, Suwon-si, KR;
Myoung-jae Lee, Suwon-si, KR;
Young-soo Park, Yongin-si, KR;
Ran-ju Jung, Suwon-si, KR;
Sun-ae Seo, Hwaseong-si, KR;
Dong-chul Kim, Suwon-si, KR;
Seung-eon Ahn, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A resistive random access memory (RRAM) having a solid solution layer and a method of manufacturing the RRAM are provided. The RRAM includes a lower electrode, a solid solution layer on the lower electrode, a resistive layer on the solid solution layer, and an upper electrode on the resistive layer. The method of manufacturing the RRAM includes forming a lower electrode, forming a solid solution layer on the lower electrode, forming a resistive layer on the solid layer and forming an upper electrode on the resistive layer, wherein the RRAM is formed of a transition metal solid solution.