The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
Nov. 10, 2008
Pooran Chandra Joshi, Vancouver, WA (US);
Hao Zhang, Vancouver, WA (US);
Jiandong Huang, Vancouver, WA (US);
Apostolos T. Voutsas, Portland, OR (US);
Pooran Chandra Joshi, Vancouver, WA (US);
Hao Zhang, Vancouver, WA (US);
Jiandong Huang, Vancouver, WA (US);
Apostolos T. Voutsas, Portland, OR (US);
Sharp Laboratory of America, Inc., Camas, WA (US);
Abstract
A method is provided for fabricating a semiconductor nanoparticle embedded Si insulating film for short wavelength luminescence applications. The method provides a bottom electrode, and deposits a semiconductor nanoparticle embedded Si insulating film, including the element of N, O, or C, overlying the bottom electrode. After annealing, a semiconductor nanoparticle embedded Si insulating film has a peak photoluminescence (PL) at a wavelength in the range of 475 to 750 nanometers.