Method for manufacturing semiconductor substrate

Abstract

A semiconductor substrate is provided by a method suitable for mass production. Further, a semiconductor substrate having an excellent characteristic with effective use of resources is provided. A single crystal semiconductor substrate is irradiated with ions to form a damaged region in the single crystal semiconductor substrate; an insulating layer is formed over the single crystal semiconductor substrate; the insulating layer and a supporting substrate are bonded to each other; a first single crystal semiconductor layer is formed over the supporting substrate by partially separating the single crystal semiconductor substrate at the damaged region; a first semiconductor layer is formed over the first single crystal semiconductor layer; a second semiconductor layer is formed over the first semiconductor layer with a different condition from that used for forming the first semiconductor layer; a second single crystal semiconductor layer is formed by improving crystallinity of the first and the second semiconductor layers.