The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2013

Filed:

Oct. 20, 2008
Applicants:

Wei Shan, Fremont, CA (US);

Xiao-dong Xiang, Danville, CA (US);

Inventors:

Wei Shan, Fremont, CA (US);

Xiao-Dong Xiang, Danville, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for producing a backside contact of a single p-n junction photovoltaic solar cell is provided. The method includes the steps of: providing a p-type substrate having a back surface; providing a plurality of p+ diffusion regions at the back surface of the substrate; providing a plurality of n+ diffusion regions at the back surface of the substrate in an alternate pattern with the p+ diffusion regions; providing an oxide layer over the p+ and n+ regions; providing an insulating layer over the back surface of the substrate; providing at least one first metal contact at the back surface for the p+ diffusion regions; and providing at least one second metal contact at the back surface for the n+ diffusion regions.


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