The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2013

Filed:

May. 19, 2010
Applicants:

Miwa Kozawa, Kawasaki, JP;

Koji Nozaki, Kawasaki, JP;

Takahisa Namiki, Kawasaki, JP;

Junichi Kon, Kawasaki, JP;

Ei Yano, Kawasaki, JP;

Inventors:

Miwa Kozawa, Kawasaki, JP;

Koji Nozaki, Kawasaki, JP;

Takahisa Namiki, Kawasaki, JP;

Junichi Kon, Kawasaki, JP;

Ei Yano, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.


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