The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2013

Filed:

Jan. 26, 2007
Applicants:

Yuji Setta, Kawasaki, JP;

Hiroki Futatsuya, Kawasaki, JP;

Inventors:

Yuji Setta, Kawasaki, JP;

Hiroki Futatsuya, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

The semiconductor device manufacturing method comprises the step of transferring patterns formed on a reticle to a semiconductor substrate by an exposure with oblique incidence illumination. In the step of making the exposure with oblique incidence illumination, the exposure is made with an aperture stopincluding a first ring-shaped aperture, and a plurality of second apertures-formed around the first ring-shaped aperture. The exposure is made with an aperture stophaving the first ring-shaped aperturewhich can transfer patterns arranged at a medium pitch to a relatively large pitch with a relatively high resolution and the second aperture-which can transfer patterns arranged at a relatively small pitch with a relatively high resolution, whereby even when the patterns are arranged at various pitch values, the DOF can be surely sufficient, and the patterns can be stably transferred.


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