The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
Apr. 19, 2010
Applicants:
Chung-mo Yang, Ansan-si, KR;
Jae-woo Joung, Suwon-si, KR;
Young-seuck Yoo, Seoul, KR;
Inventors:
Assignee:
Samsung Electro-Mechanics Co., Ltd., Gyunggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C 15/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of processing a SOI substrate to form a groove in the SOI substrate in which a silicon layer is stacked on both sides of an oxide layer is disclosed. In accordance with an embodiment of the present invention, the method includes dividing a portion of the silicon layer, in which the groove is to be processed, into a plurality of unit portions, performing dry etching on certain portions of the plurality of divided unit portions such that the oxide layer is exposed and removing remaining portions of the plurality of divided unit portions by removing the oxide layer.